About

The Plasmatherm ICP DRIE is used to

• Anisotropic vertical etching into silicon
• High power RIE to etch SiN or SiO2
• Fluorocarbon deposition
  • Typically used for anti-stiction coating for PDMS molds

The Plasmatherm deep reactive ion etching tool is a silicon etching tool capable of ~2 microns/min etch rates (depending on loading) in silicon using a Bosch process. The tool has process gases including SF6, C4F8, O2, and Ar. Silicon, photoresist, SiNx, and SiO2 are allowed in the chamber, but no metals are allowed. 

Samples include pieces under 1cm up to 4in diameter. 

Specifications

Sample Size: up to 4" diameter,  no min using 4" sample carrier.

Substrate thickness: up to 1mm

Max Power: 1000W

Gas: SF6, C4F8, O2, Ar, He

Allowable Materials: Pr, Si, SiO2, SiN

• Recipes