RIE Axic Study

This study sees to study the affects of different parameters available on the RIE Axic and how they affect etching results. A table of the parameters tested is listed below.

RIE Power (W)	100, 200, 300, 400, 500
Chamber Pressure (mTorr)	20, 50, 100, 200
Etch Time (min)	15, 30, 45
Ar Percentage (%)	10, 20, 30
O2 Percentage (%)	10, 20, 30, 40, 50

Process Notes

Sample is a silicon wafer that went through the standard SPR220 photolithography process (3000 RPM, 2 min 60^o C bake and 1 min 110^o C bake, 210 mJ dosage using hard contact on the EVG 620, followed by a 45 s development in 917 MIF). Samples were then etched in the RIE Axic, with the bolded parameters above being used when parameter was not being tested. Samples were then degreased after etching.

 

RIE Power

No degrease was performed after etching for RIE power testing for better result visualization.

20 $\mu$m

100 W

200 W

 

300 W

400 W

500 W

5 $\mu$m

100 W

200 W

 

300 W

400 W

500 W

4 $\mu$m

100 W

200 W

 

300 W

400 W

500 W

3 $\mu$m

100 W

200 W

 

300 W

400 W

500 W

Chamber Pressure

20 $\mu$m

20 mTorr

50 mTorr

 

100 mTorr

200 mTorr

5 $\mu$m

20 mTorr

50 mTorr

 

100 mTorr

200 mTorr

4 $\mu$m

20 mTorr

50 mTorr

 

100 mTorr

200 mTorr

3 $\mu$m

20 mTorr

50 mTorr

 

100 mTorr

200 mTorr

Etch Time

20 $\mu$m

15 min

30 min

 

45 min

5 $\mu$m

15 min

30 min

 

45 min

4 $\mu$m

15 min

30 min

 

45 min

3 $\mu$m

15 min

30 min

 

45 min

 

Ar Percentage

20 $\mu$m

10%

20%

 

30%

5 $\mu$m

10%

20%

 

30%

4 $\mu$m

10%

20%

 

30%

3 $\mu$m

10%

20%

 

30%

O² Percentage

20 $\mu$m

10%

20%

 

30%

40%

50%

5 $\mu$m

10%

20%

 

30%

40%

50%

4 $\mu$m

10%

20%

 

30%

40%

50%

3 $\mu$m

10%

20%

 

30%

40%

50%